Structure and Specifications
The system adopts Microwave Plasma Chemical Vapor Deposition (MPCVD) technology, in which high-frequency microwaves excite reactive gases to form a high-density plasma, enabling high-quality epitaxial growth of diamond on the substrate surface.

Processable Substrate Sizes:
Φ60 mm
Φ80 mm

The chamber features quartz or high-purity alumina windows to ensure excellent microwave transmission and plasma stability. A precision temperature-control platform allows substrate heating within a range of 700–1200 °C.

Target and Process Configuration
Process Principle: Methane (CH₄) and hydrogen (H₂) gases are activated by microwaves to form plasma, where carbon atoms are deposited and crystallized into diamond.
Available Products: Single-crystal diamonds, diamond films, diamond lenses, and cultivated gemstones.
Thickness Control: Growth rates can be adjusted between 0.5–20 μm/h, allowing precise control of film thickness according to application requirements.
Doping Capability: Elements such as boron (B) and nitrogen (N) can be introduced to achieve semiconductor-grade functionalization of diamond.

Vacuum and Control System
Equipped with a high-vacuum chamber (ultimate vacuum ≤ 1×10⁻³ Pa) and high-purity gas mass flow controllers (MFC) for accurate gas ratio regulation. The fully automated control system enables comprehensive monitoring and recording of microwave power, gas composition, substrate temperature, and growth duration. Process parameters can be stored and recalled for repeatable operations.

Application Scope
Widely applicable for:

• Industrial-grade diamond production (cutting tools, thermal management materials)

• Gem-quality cultivated diamond manufacturing (jewelry-grade diamonds)

• Optical and laser-grade diamond lenses (high-power laser windows, infrared optical components)

• Semiconductor-grade diamond substrate fabrication (for high-power electronic devices)