Structure and Specifications
The system employs a high-frequency power-driven Chemical Vapor Deposition (CVD) process to deposit high-quality silicon carbide (SiC) films or grow SiC crystals on heated substrates. The reaction chamber is constructed from high-temperature, corrosion-resistant quartz or graphite materials and is equipped with a precision heating platform capable of reaching a maximum operating temperature of 1600 °C.
Processable Sizes:
Φ60 mm
Φ80 mm
Φ100 mm
Φ120 mm
Target and Process Configuration
Process Principle: Carbon-containing gases (CH₄, C₃H₈) and silicon-containing gases (SiH₄, SiCl₄) are introduced into the chamber, where they undergo chemical reactions under high temperature and high-frequency electromagnetic fields to form silicon carbide (SiC) crystals on the substrate surface.
Heating System: Utilizes induction heating or graphite heating plates with temperature uniformity ≤ ±3 °C.
Available Types: Single-crystal SiC substrates, polycrystalline SiC films, and optical-grade SiC lenses.
Growth Rate: Adjustable from 0.2–5 μm/h, supporting long-duration stable deposition.
Vacuum and Control System
Equipped with a mechanical pump + Roots pump vacuum unit, allowing process pressure control within the range of 10–10³ Pa. The gas system employs mass flow controllers (MFC) for precise gas mixing. A PLC-based fully automated control system continuously monitors and records gas flow, substrate temperature, reaction pressure, and growth duration, with support for process program storage and repeat operation.
Application Scope
SiC substrates for semiconductor chip manufacturing
Base materials for integrated circuit (IC) power devices
High-power laser mirrors and infrared window components
High-temperature optical elements for aerospace and defense optical systems
